Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.2 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.4 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
18 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 0,80
€ 0,80 Всеки (ex VAT)
Стандарт
1
€ 0,80
€ 0,80 Всеки (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
1
Информацията за складовите наличности временно не е налична.
| количество | Единична цена |
|---|---|
| 1 - 9 | € 0,80 |
| 10 - 49 | € 0,67 |
| 50 - 99 | € 0,65 |
| 100 - 249 | € 0,60 |
| 250+ | € 0,56 |
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.2 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.4 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
18 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Детайли за продукта


