Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8.5 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
930 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.41mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
48 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.01mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Запитване за цена
Стандарт
1
Запитване за цена
Информацията за складовите наличности временно не е налична.
Стандарт
1
Информацията за складовите наличности временно не е налична.
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8.5 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
930 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.41mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
48 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.01mm
Minimum Operating Temperature
-55 °C
Детайли за продукта



