Технически документи
Спецификации
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Width
4.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.51mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Height
15.49mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 13,58
€ 1,358 Each (In a Pack of 10) (ex VAT)
Стандарт
10
€ 13,58
€ 1,358 Each (In a Pack of 10) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
10
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 10 - 90 | € 1,358 | € 13,58 |
| 100 - 240 | € 1,031 | € 10,31 |
| 250 - 490 | € 0,949 | € 9,49 |
| 500 - 990 | € 0,816 | € 8,16 |
| 1000+ | € 0,707 | € 7,07 |
Технически документи
Спецификации
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Width
4.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.51mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Height
15.49mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта


