P-Channel MOSFET, 4.7 A, 60 V, 3-Pin TO-220AB Vishay IRF9Z10PBF

Номер на артикул на RS: 145-1871Марка: Vishay№ по каталога на производителя: IRF9Z10PBF
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Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.7 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.51mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Width

4.65mm

Minimum Operating Temperature

-55 °C

Height

15.49mm

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

€ 1,35

Each (In a Tube of 50) (ex VAT)

P-Channel MOSFET, 4.7 A, 60 V, 3-Pin TO-220AB Vishay IRF9Z10PBF

€ 1,35

Each (In a Tube of 50) (ex VAT)

P-Channel MOSFET, 4.7 A, 60 V, 3-Pin TO-220AB Vishay IRF9Z10PBF
Информацията за складовите наличности временно не е налична.

Купете в насипно състояние

количествоЕдинична ценаPer Тръба
50 - 50€ 1,35€ 67,48
100 - 200€ 1,147€ 57,36
250+€ 1,013€ 50,64

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.7 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.51mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Width

4.65mm

Minimum Operating Temperature

-55 °C

Height

15.49mm

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more