P-Channel MOSFET, 12 A, 100 V, 3-Pin D2PAK Vishay IRF9530SPBF

Номер на артикул на RS: 145-1593Марка: Vishay№ по каталога на производителя: IRF9530SPBF
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Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

38 nC @ 10 V

Width

9.02mm

Height

4.83mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

€ 2,014

Each (In a Tube of 50) (ex VAT)

P-Channel MOSFET, 12 A, 100 V, 3-Pin D2PAK Vishay IRF9530SPBF

€ 2,014

Each (In a Tube of 50) (ex VAT)

P-Channel MOSFET, 12 A, 100 V, 3-Pin D2PAK Vishay IRF9530SPBF
Информацията за складовите наличности временно не е налична.

Купете в насипно състояние

количествоЕдинична ценаPer Тръба
50 - 50€ 2,014€ 100,70
100 - 200€ 1,712€ 85,58
250+€ 1,611€ 80,56

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

38 nC @ 10 V

Width

9.02mm

Height

4.83mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more