N-Channel MOSFET, 8 A, 500 V, 3-Pin TO-220AB Vishay IRF840APBF

Номер на артикул на RS: 542-9440Марка: Vishay№ по каталога на производителя: IRF840APBF
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.41mm

Width

4.7mm

Transistor Material

Si

Typical Gate Charge @ Vgs

38 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

9.01mm

Страна на произход

China

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N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 2,11

Всеки (ex VAT)

N-Channel MOSFET, 8 A, 500 V, 3-Pin TO-220AB Vishay IRF840APBF

€ 2,11

Всеки (ex VAT)

N-Channel MOSFET, 8 A, 500 V, 3-Pin TO-220AB Vishay IRF840APBF
Информацията за складовите наличности временно не е налична.

Купете в насипно състояние

количествоЕдинична цена
1 - 9€ 2,11
10 - 49€ 1,83
50 - 99€ 1,75
100 - 249€ 1,65
250+€ 1,52

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.41mm

Width

4.7mm

Transistor Material

Si

Typical Gate Charge @ Vgs

38 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

9.01mm

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more