N-Channel MOSFET, 28 A, 100 V, 3-Pin TO-220AB Vishay IRF540PBF

Номер на артикул на RS: 708-5143Марка: Vishay№ по каталога на производителя: IRF540PBF
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

77 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

72 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.41mm

Width

4.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.01mm

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 2,758

Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 28 A, 100 V, 3-Pin TO-220AB Vishay IRF540PBF
Изберете тип опаковка

€ 2,758

Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 28 A, 100 V, 3-Pin TO-220AB Vishay IRF540PBF
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
5 - 45€ 2,758€ 13,79
50 - 120€ 2,344€ 11,72
125 - 245€ 2,207€ 11,03
250 - 495€ 2,069€ 10,34
500+€ 1,653€ 8,27

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

77 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

72 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.41mm

Width

4.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.01mm

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more