Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin PowerPAK 1212-8 SQS944ENW-T1_GE3

Технически документи
Спецификации
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
27.8 W
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Width
3.15mm
Length
3.15mm
Typical Gate Charge @ Vgs
11.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Automotive Standard
AEC-Q101
Страна на произход
China
€ 1 031,33
€ 0,344 Each (On a Reel of 3000) (ex VAT)
3000
€ 1 031,33
€ 0,344 Each (On a Reel of 3000) (ex VAT)
3000
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
Технически документи
Спецификации
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
27.8 W
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Width
3.15mm
Length
3.15mm
Typical Gate Charge @ Vgs
11.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Automotive Standard
AEC-Q101
Страна на произход
China