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Vishay Siliconix TrenchFET N-Channel MOSFET, 250 A, 40 V, 7-Pin D2PAK SQM40016EM_GE3

Номер на артикул на RS: 178-3723Марка: Vishay Siliconix№ по каталога на производителя: SQM40016EM_GE3
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

250 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

163 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

11.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Automotive Standard

AEC-Q101

Страна на произход

Taiwan, Province Of China

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Информацията за складовите наличности временно не е налична.

€ 1 212,72

€ 1,516 Each (On a Reel of 800) (ex VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 250 A, 40 V, 7-Pin D2PAK SQM40016EM_GE3

€ 1 212,72

€ 1,516 Each (On a Reel of 800) (ex VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 250 A, 40 V, 7-Pin D2PAK SQM40016EM_GE3
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

250 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

163 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

11.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Automotive Standard

AEC-Q101

Страна на произход

Taiwan, Province Of China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more