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Vishay Siliconix TrenchFET P-Channel MOSFET, 9.4 A, 200 V, 4-Pin PowerPAK SO-8L SQJ431AEP-T1_GE3

Номер на артикул на RS: 178-3718Марка: Vishay Siliconix№ по каталога на производителя: SQJ431AEP-T1_GE3
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

9.4 A

Maximum Drain Source Voltage

200 V

Series

TrenchFET

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

760 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

68 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.99mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Страна на произход

China

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Информацията за складовите наличности временно не е налична.

€ 1 985,22

€ 0,662 Each (On a Reel of 3000) (ex VAT)

Vishay Siliconix TrenchFET P-Channel MOSFET, 9.4 A, 200 V, 4-Pin PowerPAK SO-8L SQJ431AEP-T1_GE3

€ 1 985,22

€ 0,662 Each (On a Reel of 3000) (ex VAT)

Vishay Siliconix TrenchFET P-Channel MOSFET, 9.4 A, 200 V, 4-Pin PowerPAK SO-8L SQJ431AEP-T1_GE3
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

9.4 A

Maximum Drain Source Voltage

200 V

Series

TrenchFET

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

760 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

68 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.99mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Страна на произход

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more