Vishay Siliconix TrenchFET P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK SQD40031EL_GE3

Номер на артикул на RS: 178-3950Марка: Vishay Siliconix№ по каталога на производителя: SQD40031EL_GE3
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

2.38mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

186 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

6.22mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Страна на произход

Taiwan, Province Of China

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€ 11,59

€ 1,159 Each (In a Pack of 10) (ex VAT)

Vishay Siliconix TrenchFET P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK SQD40031EL_GE3
Изберете тип опаковка

€ 11,59

€ 1,159 Each (In a Pack of 10) (ex VAT)

Vishay Siliconix TrenchFET P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK SQD40031EL_GE3

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Опаковка
10 - 90€ 1,159€ 11,59
100 - 490€ 0,988€ 9,88
500 - 990€ 0,869€ 8,69
1000+€ 0,753€ 7,54

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

2.38mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

186 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

6.22mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Страна на произход

Taiwan, Province Of China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more