Dual N-Channel MOSFET, 40 (Channnel 1) A, 60 (Channel 2) A, 30 V, 8-Pin PowerPAIR 6 x 5 Vishay Siliconix
Технически документи
Спецификации
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
40 (Channnel 1) A, 60 (Channel 2) A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAIR 6 x 5
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
26.6 W, 60 W
Maximum Gate Source Voltage
+16 V, +20 V, -12 V, -16 V
Width
6mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
14.6 (Channel 1) nC @ 10 V, 62 (Channel 2) nC @ 10 V
Height
0.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
3000
P.O.A.
3000
Ideate. Create. Collaborate
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Технически документи
Спецификации
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
40 (Channnel 1) A, 60 (Channel 2) A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAIR 6 x 5
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
26.6 W, 60 W
Maximum Gate Source Voltage
+16 V, +20 V, -12 V, -16 V
Width
6mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
14.6 (Channel 1) nC @ 10 V, 62 (Channel 2) nC @ 10 V
Height
0.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products