Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ348DT-T1-GE3
Технически документи
Спецификации
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAIR 3 x 3
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
16.7 W
Maximum Gate Source Voltage
-16 V, +20 V
Width
3mm
Length
3mm
Typical Gate Charge @ Vgs
12.1 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Height
0.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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€ 1 056,94
€ 0,352 Each (On a Reel of 3000) (ex VAT)
3000
€ 1 056,94
€ 0,352 Each (On a Reel of 3000) (ex VAT)
Информацията за складовите наличности временно не е налична.
3000
Информацията за складовите наличности временно не е налична.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
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Технически документи
Спецификации
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAIR 3 x 3
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
16.7 W
Maximum Gate Source Voltage
-16 V, +20 V
Width
3mm
Length
3mm
Typical Gate Charge @ Vgs
12.1 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Height
0.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products