Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 Vishay Siliconix SiZ348DT-T1-GE3
Технически документи
Спецификации
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAIR 3 x 3
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
16.7 W
Maximum Gate Source Voltage
-16 V, +20 V
Width
3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3mm
Typical Gate Charge @ Vgs
12.1 nC @ 10 V
Height
0.75mm
Forward Diode Voltage
1.2V
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,40
Each (On a Reel of 3000) (ex VAT)
3000
€ 0,40
Each (On a Reel of 3000) (ex VAT)
3000
Технически документи
Спецификации
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAIR 3 x 3
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
16.7 W
Maximum Gate Source Voltage
-16 V, +20 V
Width
3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3mm
Typical Gate Charge @ Vgs
12.1 nC @ 10 V
Height
0.75mm
Forward Diode Voltage
1.2V
Series
TrenchFET
Minimum Operating Temperature
-55 °C