Vishay Siliconix TrenchFET N-Channel MOSFET, 14.4 A, 250 V, 8-Pin PowerPAK SO-8 Si7190ADP-T1-RE3

Номер на артикул на RS: 178-3875Марка: Vishay Siliconix№ по каталога на производителя: Si7190ADP-T1-RE3
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

14.4 A

Maximum Drain Source Voltage

250 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

56.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

5mm

Length

5.99mm

Typical Gate Charge @ Vgs

14.9 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.07mm

Страна на произход

China

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€ 7,43

€ 1,487 Each (In a Pack of 5) (ex VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 14.4 A, 250 V, 8-Pin PowerPAK SO-8 Si7190ADP-T1-RE3
Изберете тип опаковка

€ 7,43

€ 1,487 Each (In a Pack of 5) (ex VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 14.4 A, 250 V, 8-Pin PowerPAK SO-8 Si7190ADP-T1-RE3

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Опаковка
5 - 45€ 1,487€ 7,43
50 - 95€ 1,239€ 6,19
100 - 495€ 0,961€ 4,81
500 - 995€ 0,843€ 4,22
1000+€ 0,757€ 3,78

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

14.4 A

Maximum Drain Source Voltage

250 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

56.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

5mm

Length

5.99mm

Typical Gate Charge @ Vgs

14.9 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.07mm

Страна на произход

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more