N-Channel MOSFET, 17.2 A, 200 V, 8-Pin PowerPAK SO-8 Vishay Siliconix Si7172ADP-T1-RE3

Номер на артикул на RS: 178-3664Марка: Vishay Siliconix№ по каталога на производителя: Si7172ADP-T1-RE3
brand-logo
Преглед на всички в MOSFETs

Технически документи

Спецификации

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

17.2 A

Maximum Drain Source Voltage

200 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Transistor Material

Si

Length

5.99mm

Typical Gate Charge @ Vgs

19.5 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

5mm

Series

TrenchFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

Страна на произход

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

P.O.A.

N-Channel MOSFET, 17.2 A, 200 V, 8-Pin PowerPAK SO-8 Vishay Siliconix Si7172ADP-T1-RE3

3000

Предлагат се на бройка по 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

P.O.A.

N-Channel MOSFET, 17.2 A, 200 V, 8-Pin PowerPAK SO-8 Vishay Siliconix Si7172ADP-T1-RE3
Информацията за складовите наличности временно не е налична.

3000

Предлагат се на бройка по 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

17.2 A

Maximum Drain Source Voltage

200 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Transistor Material

Si

Length

5.99mm

Typical Gate Charge @ Vgs

19.5 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

5mm

Series

TrenchFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

Страна на произход

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more