P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Vishay Siliconix Si2319DDS-T1-GE3
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Технически документи
Спецификации
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.04mm
Typical Gate Charge @ Vgs
12.5 nC @ 10 V
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Страна на произход
China
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 380,33
€ 0,127 Each (On a Reel of 3000) (ex VAT)
3000
€ 380,33
€ 0,127 Each (On a Reel of 3000) (ex VAT)
3000
Технически документи
Спецификации
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.04mm
Typical Gate Charge @ Vgs
12.5 nC @ 10 V
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Страна на произход
China