N-Channel MOSFET, 9.2 A, 100 V, 3-Pin TO-220AB Vishay Siliconix IRF520PBF
Технически документи
Спецификации
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
9.2 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.52mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Height
15.85mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.8V
Детайли за продукта
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Запитване за цена
Each (In a Pack of 50) (ex VAT)
50
Запитване за цена
Each (In a Pack of 50) (ex VAT)
Информацията за складовите наличности временно не е налична.
50
Информацията за складовите наличности временно не е налична.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
9.2 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.52mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Height
15.85mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.8V
Детайли за продукта
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products