Toshiba U-MOSVIII-H N-Channel MOSFET, 31 A, 30 V, 8-Pin TSON TPN11003NL,LQ(S

Номер на артикул на RS: 133-2811Марка: Toshiba№ по каталога на производителя: TPN11003NL,LQ(S
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

30 V

Series

U-MOSVIII-H

Package Type

TSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

3.1mm

Typical Gate Charge @ Vgs

7.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

3.1mm

Height

0.85mm

Forward Diode Voltage

1.2V

Страна на произход

Japan

Детайли за продукта

MOSFET Transistors, Toshiba

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€ 4,82

€ 0,241 Each (In a Pack of 20) (ex VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 31 A, 30 V, 8-Pin TSON TPN11003NL,LQ(S

20

Предлагат се на бройка по 20
20€ 4,82
40€ 9,64
60€ 14,46
80€ 19,27
100€ 20,44
120€ 24,53
140€ 28,61
160€ 32,70
180€ 36,79
200€ 37,91
220€ 41,70
240€ 45,49
260€ 49,28
280€ 53,07
300€ 56,86

€ 4,82

€ 0,241 Each (In a Pack of 20) (ex VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 31 A, 30 V, 8-Pin TSON TPN11003NL,LQ(S

Информацията за складовите наличности временно не е налична.

20

Предлагат се на бройка по 20
20€ 4,82
40€ 9,64
60€ 14,46
80€ 19,27
100€ 20,44
120€ 24,53
140€ 28,61
160€ 32,70
180€ 36,79
200€ 37,91
220€ 41,70
240€ 45,49
260€ 49,28
280€ 53,07
300€ 56,86

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Опаковка
20 - 80€ 0,241€ 4,82
100 - 180€ 0,204€ 4,09
200 - 980€ 0,19€ 3,79
1000 - 1980€ 0,183€ 3,65
2000+€ 0,177€ 3,54

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

30 V

Series

U-MOSVIII-H

Package Type

TSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

3.1mm

Typical Gate Charge @ Vgs

7.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

3.1mm

Height

0.85mm

Forward Diode Voltage

1.2V

Страна на произход

Japan

Детайли за продукта

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more