Toshiba U-MOSVIII-H N-Channel MOSFET, 31 A, 30 V, 8-Pin TSON TPN11003NL,LQ(S

Номер на артикул на RS: 133-2811Марка: Toshiba№ по каталога на производителя: TPN11003NL,LQ(S
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

30 V

Series

U-MOSVIII-H

Package Type

TSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

3.1mm

Length

3.1mm

Typical Gate Charge @ Vgs

7.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.85mm

Страна на произход

Japan

Детайли за продукта

MOSFET Transistors, Toshiba

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€ 4,80

€ 0,24 Each (In a Pack of 20) (ex VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 31 A, 30 V, 8-Pin TSON TPN11003NL,LQ(S

20

Предлагат се на бройка по 20
20€ 4,80
40€ 9,59
60€ 14,39
80€ 19,18
100€ 20,34
120€ 24,41
140€ 28,48
160€ 32,55
180€ 36,62
200€ 37,73
220€ 41,50
240€ 45,28
260€ 49,05
280€ 52,82
300€ 56,60

€ 4,80

€ 0,24 Each (In a Pack of 20) (ex VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 31 A, 30 V, 8-Pin TSON TPN11003NL,LQ(S

Информацията за складовите наличности временно не е налична.

20

Предлагат се на бройка по 20
20€ 4,80
40€ 9,59
60€ 14,39
80€ 19,18
100€ 20,34
120€ 24,41
140€ 28,48
160€ 32,55
180€ 36,62
200€ 37,73
220€ 41,50
240€ 45,28
260€ 49,05
280€ 52,82
300€ 56,60

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Опаковка
20 - 80€ 0,24€ 4,80
100 - 180€ 0,203€ 4,07
200 - 980€ 0,189€ 3,77
1000 - 1980€ 0,182€ 3,64
2000+€ 0,176€ 3,52

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

30 V

Series

U-MOSVIII-H

Package Type

TSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

3.1mm

Length

3.1mm

Typical Gate Charge @ Vgs

7.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.85mm

Страна на произход

Japan

Детайли за продукта

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more