Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Package Type
SOP Advanced
Series
TPH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
61 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Width
5mm
Number of Elements per Chip
1
Height
0.95mm
Страна на произход
Japan
Детайли за продукта
MOSFET Transistors, Toshiba
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
5000
P.O.A.
5000
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Package Type
SOP Advanced
Series
TPH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
61 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Width
5mm
Number of Elements per Chip
1
Height
0.95mm
Страна на произход
Japan
Детайли за продукта