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Toshiba TPC P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125

Номер на артикул на RS: 796-5115Марка: Toshiba№ по каталога на производителя: TPC8125
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

30 V

Series

TPC

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.9 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +20 V

Width

3.9mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.9mm

Typical Gate Charge @ Vgs

64 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.52mm

Детайли за продукта

MOSFET P-Channel, TPC Series, Toshiba

MOSFET Transistors, Toshiba

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Информацията за складовите наличности временно не е налична.

€ 3,03

€ 0,605 Each (In a Pack of 5) (ex VAT)

Toshiba TPC P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125
Изберете тип опаковка

€ 3,03

€ 0,605 Each (In a Pack of 5) (ex VAT)

Toshiba TPC P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
5 - 45€ 0,605€ 3,03
50 - 495€ 0,573€ 2,86
500 - 2495€ 0,544€ 2,72
2500 - 4995€ 0,486€ 2,43
5000+€ 0,455€ 2,28

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

30 V

Series

TPC

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.9 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +20 V

Width

3.9mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.9mm

Typical Gate Charge @ Vgs

64 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.52mm

Детайли за продукта

MOSFET P-Channel, TPC Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more