Toshiba TK N-Channel MOSFET, 72 A, 120 V, 3-Pin TO-220SIS TK72A12N1,S4X(S
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
120 V
Package Type
TO-220SIS
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.5mm
Length
10mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Height
15mm
Страна на произход
Japan
Детайли за продукта
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 92,91
€ 1,858 Each (In a Tube of 50) (ex VAT)
50
€ 92,91
€ 1,858 Each (In a Tube of 50) (ex VAT)
Информацията за складовите наличности временно не е налична.
50
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Тръба |
|---|---|---|
| 50 - 200 | € 1,858 | € 92,91 |
| 250 - 450 | € 1,725 | € 86,26 |
| 500+ | € 1,682 | € 84,10 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
120 V
Package Type
TO-220SIS
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.5mm
Length
10mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Height
15mm
Страна на произход
Japan
Детайли за продукта
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products