N-Channel MOSFET, 61.8 A, 600 V, 3-Pin TO-247 Toshiba TK62N60W5,S1VF(S
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
61.8 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
400 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.94mm
Typical Gate Charge @ Vgs
205 nC @ 10 V
Height
20.95mm
Forward Diode Voltage
1.7V
Детайли за продукта
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
1
P.O.A.
1
Ideate. Create. Collaborate
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Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
61.8 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
400 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.94mm
Typical Gate Charge @ Vgs
205 nC @ 10 V
Height
20.95mm
Forward Diode Voltage
1.7V
Детайли за продукта
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products