Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
126 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
10.16mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
49 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Страна на произход
China
Детайли за продукта
MOSFET Transistors, Toshiba
€ 44,89
€ 0,898 Each (In a Tube of 50) (ex VAT)
50
€ 44,89
€ 0,898 Each (In a Tube of 50) (ex VAT)
Информацията за складовите наличности временно не е налична.
50
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Тръба |
|---|---|---|
| 50 - 200 | € 0,898 | € 44,89 |
| 250 - 450 | € 0,767 | € 38,36 |
| 500 - 1200 | € 0,749 | € 37,45 |
| 1250+ | € 0,728 | € 36,42 |
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
126 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
10.16mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
49 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Страна на произход
China
Детайли за продукта


