Toshiba TK N-Channel MOSFET, 60 A, 120 V, 3-Pin TO-220 TK32E12N1,S1X(S

Номер на артикул на RS: 168-7971Марка: Toshiba№ по каталога на производителя: TK32E12N1,S1X(S
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

120 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

13.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

98 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

15.1mm

Страна на произход

China

Детайли за продукта

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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Може да се интересувате от
N-Channel MOSFET, 60 A, 120 V, 3-Pin TO-220 Toshiba TK32E12N1,S1X(S
Запитване за ценаEach (Supplied in a Bag) (ex VAT)

€ 40,12

€ 0,802 Each (In a Tube of 50) (ex VAT)

Toshiba TK N-Channel MOSFET, 60 A, 120 V, 3-Pin TO-220 TK32E12N1,S1X(S

€ 40,12

€ 0,802 Each (In a Tube of 50) (ex VAT)

Toshiba TK N-Channel MOSFET, 60 A, 120 V, 3-Pin TO-220 TK32E12N1,S1X(S

Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Тръба
50 - 200€ 0,802€ 40,12
250 - 950€ 0,686€ 34,32
1000 - 2450€ 0,668€ 33,41
2500+€ 0,652€ 32,62

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
N-Channel MOSFET, 60 A, 120 V, 3-Pin TO-220 Toshiba TK32E12N1,S1X(S
Запитване за ценаEach (Supplied in a Bag) (ex VAT)

Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

120 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

13.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

98 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

15.1mm

Страна на произход

China

Детайли за продукта

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
N-Channel MOSFET, 60 A, 120 V, 3-Pin TO-220 Toshiba TK32E12N1,S1X(S
Запитване за ценаEach (Supplied in a Bag) (ex VAT)