Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
88 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
86 nC @ 10 V
Number of Elements per Chip
1
Width
4.45mm
Height
15.1mm
Страна на произход
China
Детайли за продукта
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
€ 175,25
€ 3,505 Each (In a Tube of 50) (ex VAT)
50
€ 175,25
€ 3,505 Each (In a Tube of 50) (ex VAT)
Информацията за складовите наличности временно не е налична.
50
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Тръба |
|---|---|---|
| 50 - 200 | € 3,505 | € 175,25 |
| 250 - 450 | € 3,155 | € 157,75 |
| 500+ | € 2,874 | € 143,71 |
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
88 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
86 nC @ 10 V
Number of Elements per Chip
1
Width
4.45mm
Height
15.1mm
Страна на произход
China
Детайли за продукта


