Toshiba TK30E06N1 N-channel MOSFET, 43 A, 60 V TK, 3-Pin TO-220

Номер на артикул на RS: 796-5083PМарка: Toshiba№ по каталога на производителя: TK30E06N1
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

43 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

53 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

16 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Height

15.1mm

Детайли за продукта

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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Toshiba TK N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 TK30E06N1
€ 0,571Each (In a Tube of 50) (ex VAT)

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Each (Supplied in a Tube) (ex VAT)

Toshiba TK30E06N1 N-channel MOSFET, 43 A, 60 V TK, 3-Pin TO-220
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Запитване за цена

Each (Supplied in a Tube) (ex VAT)

Toshiba TK30E06N1 N-channel MOSFET, 43 A, 60 V TK, 3-Pin TO-220

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Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
Toshiba TK N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 TK30E06N1
€ 0,571Each (In a Tube of 50) (ex VAT)

Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

43 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

53 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

16 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Height

15.1mm

Детайли за продукта

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
Toshiba TK N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 TK30E06N1
€ 0,571Each (In a Tube of 50) (ex VAT)