Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
16 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Height
15.1mm
Детайли за продукта
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Запитване за цена
Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
5
Запитване за цена
Each (Supplied in a Tube) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Тръба)
5
Информацията за складовите наличности временно не е налична.
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
16 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Height
15.1mm
Детайли за продукта


