Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220SIS
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Height
15mm
Страна на произход
China
Детайли за продукта
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
€ 8,23
€ 0,823 Each (In a Pack of 10) (ex VAT)
Стандарт
10
€ 8,23
€ 0,823 Each (In a Pack of 10) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
10
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 10 - 90 | € 0,823 | € 8,23 |
| 100 - 190 | € 0,68 | € 6,80 |
| 200 - 360 | € 0,601 | € 6,01 |
| 370 - 740 | € 0,583 | € 5,83 |
| 750+ | € 0,572 | € 5,72 |
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220SIS
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Height
15mm
Страна на произход
China
Детайли за продукта


