Toshiba DTMOSIV N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220SIS TK25A60X,S5X(M

Номер на артикул на RS: 125-0553Марка: Toshiba№ по каталога на производителя: TK25A60X,S5X(M
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15mm

Страна на произход

Japan

Детайли за продукта

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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€ 11,39

€ 2,278 Each (In a Pack of 5) (ex VAT)

Toshiba DTMOSIV N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220SIS TK25A60X,S5X(M

5

Предлагат се на бройка по 5
5€ 11,39
10€ 22,78
15€ 34,16
20€ 45,55
25€ 48,53
30€ 58,23
35€ 67,94
40€ 77,65
45€ 87,35
50€ 89,22
55€ 98,14
60€ 107,06
65€ 115,98
70€ 124,90
75€ 133,82

€ 11,39

€ 2,278 Each (In a Pack of 5) (ex VAT)

Toshiba DTMOSIV N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220SIS TK25A60X,S5X(M

Информацията за складовите наличности временно не е налична.

5

Предлагат се на бройка по 5
5€ 11,39
10€ 22,78
15€ 34,16
20€ 45,55
25€ 48,53
30€ 58,23
35€ 67,94
40€ 77,65
45€ 87,35
50€ 89,22
55€ 98,14
60€ 107,06
65€ 115,98
70€ 124,90
75€ 133,82

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Опаковка
5 - 20€ 2,278€ 11,39
25 - 45€ 1,941€ 9,71
50 - 120€ 1,784€ 8,92
125 - 245€ 1,762€ 8,81
250+€ 1,743€ 8,72

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15mm

Страна на произход

Japan

Детайли за продукта

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more