Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.02mm
Transistor Material
Si
Height
20.95mm
Страна на произход
China
Детайли за продукта
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
€ 84,04
€ 4,202 Each (Supplied in a Bag) (ex VAT)
Производствен пакет (Чувал)
20
€ 84,04
€ 4,202 Each (Supplied in a Bag) (ex VAT)
Производствен пакет (Чувал)
20
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Чувал |
---|---|---|
20 - 38 | € 4,202 | € 8,40 |
40 - 72 | € 3,693 | € 7,39 |
74 - 148 | € 3,491 | € 6,98 |
150+ | € 3,399 | € 6,80 |
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.02mm
Transistor Material
Si
Height
20.95mm
Страна на произход
China
Детайли за продукта