Toshiba N-Channel MOSFET, 20 A, 250 V, 3-Pin TO-220SIS TK20A25D,S5X(J

Номер на артикул на RS: 144-5200Марка: Toshiba№ по каталога на производителя: TK20A25D,S5X(J
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

250 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15mm

Страна на произход

Japan

Детайли за продукта

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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€ 6,39

€ 0,639 Each (In a Pack of 10) (ex VAT)

Toshiba N-Channel MOSFET, 20 A, 250 V, 3-Pin TO-220SIS TK20A25D,S5X(J

10

Предлагат се на бройка по 10
10€ 6,39
20€ 12,77
30€ 18,21
40€ 24,28
50€ 30,34
60€ 36,41
70€ 42,48
80€ 48,55
90€ 54,62
100€ 60,69
110€ 66,76
120€ 72,83
130€ 78,90
140€ 84,96
150€ 91,03

€ 6,39

€ 0,639 Each (In a Pack of 10) (ex VAT)

Toshiba N-Channel MOSFET, 20 A, 250 V, 3-Pin TO-220SIS TK20A25D,S5X(J

Информацията за складовите наличности временно не е налична.

10

Предлагат се на бройка по 10
10€ 6,39
20€ 12,77
30€ 18,21
40€ 24,28
50€ 30,34
60€ 36,41
70€ 42,48
80€ 48,55
90€ 54,62
100€ 60,69
110€ 66,76
120€ 72,83
130€ 78,90
140€ 84,96
150€ 91,03

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Опаковка
10 - 20€ 0,639€ 6,39
30+€ 0,607€ 6,07

Ideate. Create. Collaborate

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No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

250 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15mm

Страна на произход

Japan

Детайли за продукта

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more