Toshiba U-MOSVIII-H N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TK15S04N1L,LQ(O

Номер на артикул на RS: 133-2798Марка: Toshiba№ по каталога на производителя: TK15S04N1L,LQ(O
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

40 V

Series

U-MOSVIII-H

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

46 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5.5mm

Length

6.5mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Height

2.3mm

Страна на произход

Japan

Детайли за продукта

MOSFET Transistors, Toshiba

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€ 4,41

€ 0,881 Each (In a Pack of 5) (ex VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TK15S04N1L,LQ(O
Изберете тип опаковка

€ 4,41

€ 0,881 Each (In a Pack of 5) (ex VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TK15S04N1L,LQ(O

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Опаковка
5 - 20€ 0,881€ 4,41
25 - 45€ 0,749€ 3,74
50 - 245€ 0,724€ 3,62
250 - 495€ 0,701€ 3,50
500+€ 0,676€ 3,38

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

40 V

Series

U-MOSVIII-H

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

46 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5.5mm

Length

6.5mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Height

2.3mm

Страна на произход

Japan

Детайли за продукта

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more