N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK Toshiba TK14G65W,RQ(S
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
13.7 A
Maximum Drain Source Voltage
650 V
Series
DTMOSIV
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
8.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.35mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Height
4.46mm
Forward Diode Voltage
1.7V
Страна на произход
Japan
Детайли за продукта
MOSFET Transistors, Toshiba
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 10,20
€ 2,04 Each (In a Pack of 5) (ex VAT)
5
€ 10,20
€ 2,04 Each (In a Pack of 5) (ex VAT)
5
Купете в насипно състояние
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 5 - 20 | € 2,04 | € 10,20 |
| 25 - 45 | € 1,772 | € 8,86 |
| 50 - 245 | € 1,691 | € 8,46 |
| 250 - 495 | € 1,622 | € 8,11 |
| 500+ | € 1,588 | € 7,94 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
13.7 A
Maximum Drain Source Voltage
650 V
Series
DTMOSIV
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
8.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.35mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Height
4.46mm
Forward Diode Voltage
1.7V
Страна на произход
Japan
Детайли за продукта
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products