Toshiba DTMOSIV N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S4VX(M

Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9.7 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220SIS
Series
DTMOSIV
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
30 W
Maximum Gate Source Voltage
-30 V, +30 V
Length
10mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.5mm
Forward Diode Voltage
1.7V
Height
15mm
Страна на произход
Japan
Детайли за продукта
MOSFET Transistors, Toshiba
€ 5,48
€ 1,096 Each (In a Pack of 5) (ex VAT)
5
€ 5,48
€ 1,096 Each (In a Pack of 5) (ex VAT)
5
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Опаковка |
---|---|---|
5 - 20 | € 1,096 | € 5,48 |
25 - 45 | € 0,711 | € 3,55 |
50 - 120 | € 0,692 | € 3,46 |
125 - 245 | € 0,675 | € 3,38 |
250+ | € 0,656 | € 3,28 |
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9.7 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220SIS
Series
DTMOSIV
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
30 W
Maximum Gate Source Voltage
-30 V, +30 V
Length
10mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.5mm
Forward Diode Voltage
1.7V
Height
15mm
Страна на произход
Japan
Детайли за продукта