Toshiba DTMOSIV N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S4VX(M

Номер на артикул на RS: 125-0532Марка: Toshiba№ по каталога на производителя: TK10A60W,S4VX(MDistrelec Article No.: 30424218
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220SIS

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

30 W

Maximum Gate Source Voltage

-30 V, +30 V

Length

10mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.5mm

Forward Diode Voltage

1.7V

Height

15mm

Страна на произход

Japan

Детайли за продукта

MOSFET Transistors, Toshiba

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€ 5,40

€ 1,08 Each (In a Pack of 5) (ex VAT)

Toshiba DTMOSIV N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S4VX(M

5

Предлагат се на бройка по 5
5€ 5,40
10€ 10,80
15€ 16,20
20€ 21,59
25€ 17,50
30€ 21,00
35€ 24,50
40€ 28,00
45€ 31,50
50€ 34,10
55€ 37,50
60€ 40,91
65€ 44,32
70€ 47,73
75€ 51,14

€ 5,40

€ 1,08 Each (In a Pack of 5) (ex VAT)

Toshiba DTMOSIV N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S4VX(M

Информацията за складовите наличности временно не е налична.

5

Предлагат се на бройка по 5
5€ 5,40
10€ 10,80
15€ 16,20
20€ 21,59
25€ 17,50
30€ 21,00
35€ 24,50
40€ 28,00
45€ 31,50
50€ 34,10
55€ 37,50
60€ 40,91
65€ 44,32
70€ 47,73
75€ 51,14

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Опаковка
5 - 20€ 1,08€ 5,40
25 - 45€ 0,70€ 3,50
50 - 120€ 0,682€ 3,41
125 - 245€ 0,664€ 3,32
250+€ 0,646€ 3,23

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220SIS

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

30 W

Maximum Gate Source Voltage

-30 V, +30 V

Length

10mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.5mm

Forward Diode Voltage

1.7V

Height

15mm

Страна на произход

Japan

Детайли за продукта

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more