Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
214 A
Maximum Drain Source Voltage
80 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Детайли за продукта
MOSFET Transistors, Toshiba
€ 2,47
€ 2,47 Всеки (ex VAT)
Стандарт
1
€ 2,47
€ 2,47 Всеки (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
1
Информацията за складовите наличности временно не е налична.
| количество | Единична цена |
|---|---|
| 1 - 9 | € 2,47 |
| 10 - 19 | € 2,34 |
| 20 - 49 | € 2,22 |
| 50 - 249 | € 1,97 |
| 250+ | € 1,84 |
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
214 A
Maximum Drain Source Voltage
80 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Детайли за продукта


