Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
263 A
Maximum Drain Source Voltage
60 V
Series
U-MOSVIII-H
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Height
15.1mm
Forward Diode Voltage
1.2V
Страна на произход
Japan
Детайли за продукта
MOSFET Transistors, Toshiba
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 2,042
Each (In a Pack of 5) (ex VAT)
5
€ 2,042
Each (In a Pack of 5) (ex VAT)
5
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
5 - 20 | € 2,042 | € 10,21 |
25 - 45 | € 1,841 | € 9,20 |
50 - 120 | € 1,675 | € 8,37 |
125 - 245 | € 1,567 | € 7,84 |
250+ | € 1,546 | € 7,73 |
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
263 A
Maximum Drain Source Voltage
60 V
Series
U-MOSVIII-H
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Height
15.1mm
Forward Diode Voltage
1.2V
Страна на произход
Japan
Детайли за продукта