MOSFET Transistor Toshiba TK100A10N1,S4X(S
Технически документи
Спецификации
Brand
ToshibaMaximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220SIS
Maximum Drain Source Resistance
3,8 mΩ
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
140 nC při 10 V
Страна на произход
China
Детайли за продукта
MOSFET Transistors, Toshiba
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
2
P.O.A.
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
ToshibaMaximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220SIS
Maximum Drain Source Resistance
3,8 mΩ
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
140 nC při 10 V
Страна на произход
China
Детайли за продукта
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products