Toshiba P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK TJ8S06M3L

Номер на артикул на RS: 171-2492Марка: Toshiba№ по каталога на производителя: TJ8S06M3L
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

130 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +10 V

Number of Elements per Chip

1

Width

7mm

Length

6.5mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Height

2.3mm

Automotive Standard

AEC-Q101

Страна на произход

Japan

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Информацията за складовите наличности временно не е налична.

€ 9,18

€ 0,918 Each (In a Pack of 10) (ex VAT)

Toshiba P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK TJ8S06M3L
Изберете тип опаковка

€ 9,18

€ 0,918 Each (In a Pack of 10) (ex VAT)

Toshiba P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK TJ8S06M3L
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
10 - 40€ 0,918€ 9,18
50 - 90€ 0,832€ 8,32
100 - 990€ 0,641€ 6,40
1000+€ 0,395€ 3,95

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
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Click here to find out more

Технически документи

Спецификации

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

130 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +10 V

Number of Elements per Chip

1

Width

7mm

Length

6.5mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Height

2.3mm

Automotive Standard

AEC-Q101

Страна на произход

Japan

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more