Технически документи
Спецификации
Brand
ToshibaMemory Size
2 GByte
Interface Type
Parallel
Package Type
TSOP
Pin Count
48
Organisation
256M x 8
Mounting Type
Surface Mount
Cell Type
NAND
Minimum Operating Supply Voltage
-0.6 V
Maximum Operating Supply Voltage
4.6 V
Block Organisation
Symmetrical
Dimensions
18.4 x 12.4 x 1mm
Minimum Operating Temperature
-40 °C
Maximum Random Access Time
25ns
Number of Words
256M
Number of Bits per Word
8bit
Maximum Operating Temperature
+85 °C
Детайли за продукта
Flash Memory, Toshiba
Flash Memory
FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
Стандарт
1
P.O.A.
Стандарт
1
Технически документи
Спецификации
Brand
ToshibaMemory Size
2 GByte
Interface Type
Parallel
Package Type
TSOP
Pin Count
48
Organisation
256M x 8
Mounting Type
Surface Mount
Cell Type
NAND
Minimum Operating Supply Voltage
-0.6 V
Maximum Operating Supply Voltage
4.6 V
Block Organisation
Symmetrical
Dimensions
18.4 x 12.4 x 1mm
Minimum Operating Temperature
-40 °C
Maximum Random Access Time
25ns
Number of Words
256M
Number of Bits per Word
8bit
Maximum Operating Temperature
+85 °C
Детайли за продукта
Flash Memory, Toshiba
Flash Memory
FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.