Технически документи
Спецификации
Brand
ToshibaMemory Size
2Gbit
Organisation
2048 x 8 bit
Data Bus Width
8bit
Maximum Random Access Time
40µs
Mounting Type
Surface Mount
Package Type
TFBGA
Pin Count
63
Dimensions
11 x 9mm
Maximum Operating Supply Voltage
3.6 V
Maximum Operating Temperature
+85 °C
Number of Words
2048
Minimum Operating Temperature
-40 °C
Number of Bits per Word
8
Minimum Operating Supply Voltage
2.7 V
Детайли за продукта
BENAND™, SLC NAND Flash Memory with build in ECC, Toshiba
BENAND™ is SLC (Single Level Cell) NAND Flash Memory with build in ECC (Error Correction Code).
BENAND™ SLC NAND Flash Memory
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
1
P.O.A.
1
Технически документи
Спецификации
Brand
ToshibaMemory Size
2Gbit
Organisation
2048 x 8 bit
Data Bus Width
8bit
Maximum Random Access Time
40µs
Mounting Type
Surface Mount
Package Type
TFBGA
Pin Count
63
Dimensions
11 x 9mm
Maximum Operating Supply Voltage
3.6 V
Maximum Operating Temperature
+85 °C
Number of Words
2048
Minimum Operating Temperature
-40 °C
Number of Bits per Word
8
Minimum Operating Supply Voltage
2.7 V
Детайли за продукта
BENAND™, SLC NAND Flash Memory with build in ECC, Toshiba
BENAND™ is SLC (Single Level Cell) NAND Flash Memory with build in ECC (Error Correction Code).