Toshiba SSM6 Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin US6 SSM6N35FU(TE85L,F)

Номер на артикул на RS: 695-4849Марка: Toshiba№ по каталога на производителя: SSM6N35FU(TE85L,F)
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

180 mA

Maximum Drain Source Voltage

20 V

Package Type

US6

Series

SSM6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

20 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

200 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-10 V, +10 V

Length

1.25mm

Maximum Operating Temperature

+150 °C

Width

1.25mm

Transistor Material

Si

Number of Elements per Chip

2

Height

0.9mm

Minimum Operating Temperature

-55 °C

Страна на произход

Japan

Детайли за продукта

Dual MOSFET N-Channel SSM6Nxx, Toshiba

MOSFET Transistors, Toshiba

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Информацията за складовите наличности временно не е налична.

€ 2,03

€ 0,203 Each (In a Pack of 10) (ex VAT)

Toshiba SSM6 Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin US6 SSM6N35FU(TE85L,F)

10

Предлагат се на бройка по 10
10€ 2,03
20€ 4,07
30€ 6,10
40€ 8,14
50€ 10,17
60€ 12,21
70€ 14,24
80€ 16,28
90€ 18,31
100€ 20,35
110€ 22,38
120€ 24,41
130€ 26,45
140€ 28,48
150€ 30,52

€ 2,03

€ 0,203 Each (In a Pack of 10) (ex VAT)

Toshiba SSM6 Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin US6 SSM6N35FU(TE85L,F)
Информацията за складовите наличности временно не е налична.

10

Предлагат се на бройка по 10
10€ 2,03
20€ 4,07
30€ 6,10
40€ 8,14
50€ 10,17
60€ 12,21
70€ 14,24
80€ 16,28
90€ 18,31
100€ 20,35
110€ 22,38
120€ 24,41
130€ 26,45
140€ 28,48
150€ 30,52

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

180 mA

Maximum Drain Source Voltage

20 V

Package Type

US6

Series

SSM6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

20 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

200 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-10 V, +10 V

Length

1.25mm

Maximum Operating Temperature

+150 °C

Width

1.25mm

Transistor Material

Si

Number of Elements per Chip

2

Height

0.9mm

Minimum Operating Temperature

-55 °C

Страна на произход

Japan

Детайли за продукта

Dual MOSFET N-Channel SSM6Nxx, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more