Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Width
1.8mm
Number of Elements per Chip
1
Height
0.7mm
Forward Diode Voltage
1.2V
Страна на произход
Thailand
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,083
Each (On a Reel of 3000) (ex VAT)
3000
€ 0,083
Each (On a Reel of 3000) (ex VAT)
3000
Купете в насипно състояние
количество | Единична цена | Per Ролка |
---|---|---|
3000 - 3000 | € 0,083 | € 249,10 |
6000 - 6000 | € 0,08 | € 238,58 |
9000+ | € 0,075 | € 224,54 |
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Width
1.8mm
Number of Elements per Chip
1
Height
0.7mm
Forward Diode Voltage
1.2V
Страна на произход
Thailand