Технически документи
Спецификации
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
136 mΩ
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Width
1.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
5.9 nC @ -10 V nC
Height
0.8mm
Страна на произход
Japan
Детайли за продукта
MOSFET P-Channel, SSM3J Series, Toshiba
MOSFET Transistors, Toshiba
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,165
Each (In a Pack of 30) (ex VAT)
30
€ 0,165
Each (In a Pack of 30) (ex VAT)
30
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
30 - 120 | € 0,165 | € 4,94 |
150+ | € 0,156 | € 4,68 |
Технически документи
Спецификации
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
136 mΩ
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Width
1.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
5.9 nC @ -10 V nC
Height
0.8mm
Страна на произход
Japan
Детайли за продукта