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P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 Toshiba SSM3J334R,LF(T

Номер на артикул на RS: 144-5260Марка: Toshiba№ по каталога на производителя: SSM3J334R,LF(T
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

136 mΩ

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Width

1.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

5.9 nC @ -10 V nC

Height

0.8mm

Страна на произход

Japan

Детайли за продукта

MOSFET P-Channel, SSM3J Series, Toshiba

MOSFET Transistors, Toshiba

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Информацията за складовите наличности временно не е налична.

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Информацията за складовите наличности временно не е налична.

€ 0,165

Each (In a Pack of 30) (ex VAT)

P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 Toshiba SSM3J334R,LF(T

€ 0,165

Each (In a Pack of 30) (ex VAT)

P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 Toshiba SSM3J334R,LF(T
Информацията за складовите наличности временно не е налична.

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
30 - 120€ 0,165€ 4,94
150+€ 0,156€ 4,68

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

136 mΩ

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Width

1.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

5.9 nC @ -10 V nC

Height

0.8mm

Страна на произход

Japan

Детайли за продукта

MOSFET P-Channel, SSM3J Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more