P-Channel MOSFET, 100 mA, 30 V, 3-Pin SOT-723 Toshiba SSM3J15FV

Номер на артикул на RS: 171-2395Марка: Toshiba№ по каталога на производителя: SSM3J15FV
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

100 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-723

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

32 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.7V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

150 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

0.8mm

Height

0.5mm

Страна на произход

Japan

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Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

P.O.A.

P-Channel MOSFET, 100 mA, 30 V, 3-Pin SOT-723 Toshiba SSM3J15FV

8000

Предлагат се на бройка по 8000
8000P.O.A.
16000P.O.A.
24000P.O.A.
32000P.O.A.
40000P.O.A.
48000P.O.A.
56000P.O.A.
64000P.O.A.
72000P.O.A.
80000P.O.A.
88000P.O.A.
96000P.O.A.
104000P.O.A.
112000P.O.A.
120000P.O.A.

P.O.A.

P-Channel MOSFET, 100 mA, 30 V, 3-Pin SOT-723 Toshiba SSM3J15FV
Информацията за складовите наличности временно не е налична.

8000

Предлагат се на бройка по 8000
8000P.O.A.
16000P.O.A.
24000P.O.A.
32000P.O.A.
40000P.O.A.
48000P.O.A.
56000P.O.A.
64000P.O.A.
72000P.O.A.
80000P.O.A.
88000P.O.A.
96000P.O.A.
104000P.O.A.
112000P.O.A.
120000P.O.A.

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

100 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-723

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

32 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.7V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

150 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

0.8mm

Height

0.5mm

Страна на произход

Japan

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more