Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
800 V
Series
2SK
Package Type
SC-67
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
45 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Forward Diode Voltage
1.7V
Страна на произход
Malaysia
Детайли за продукта
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
€ 7,80
€ 1,559 Each (In a Pack of 5) (ex VAT)
5
€ 7,80
€ 1,559 Each (In a Pack of 5) (ex VAT)
Информацията за складовите наличности временно не е налична.
5
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 5 - 20 | € 1,559 | € 7,80 |
| 25 - 45 | € 1,209 | € 6,05 |
| 50 - 95 | € 1,173 | € 5,86 |
| 100 - 245 | € 1,157 | € 5,78 |
| 250+ | € 1,148 | € 5,74 |
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
800 V
Series
2SK
Package Type
SC-67
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
45 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Forward Diode Voltage
1.7V
Страна на произход
Malaysia
Детайли за продукта


