Texas Instruments UCC27519DBVT MOSFET Gate Driver 1, 4 A 5-Pin 18 V, SOT-23

Технически документи
Спецификации
Brand
Texas InstrumentsProduct Type
MOSFET
Output Current
4A
Pin Count
5
Package Type
SOT-23
Fall Time
7ns
Number of Outputs
5
Driver Type
MOSFET
Rise Time
8ns
Minimum Supply Voltage
18V
Maximum Supply Voltage
18V
Number of Drivers
1
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
140°C
Width
1.75 mm
Series
UCC2751x
Height
1.45mm
Length
3.05mm
Standards/Approvals
No
Mount Type
Surface
Automotive Standard
No
Детайли за продукта
MOSFET & IGBT Drivers, 3A to 5A, Texas Instruments
A range of dedicated Gate Driver ICs from Texas Instruments suitable for both MOSFET and IGBT applications. The devices are capable of providing suitable high current outputs compatible with the drive requirements of MOSFET and IGBT power devices and are available in a variety of configurations and package types.
MOSFET & IGBT Drivers, Texas Instruments
Информацията за складовите наличности временно не е налична.
€ 4,11
€ 0,823 Each (In a Bag of 5) (ex VAT)
Стандарт
5
€ 4,11
€ 0,823 Each (In a Bag of 5) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
5
| количество | Единична цена | Per Чувал |
|---|---|---|
| 5 - 20 | € 0,823 | € 4,11 |
| 25 - 45 | € 0,779 | € 3,90 |
| 50 - 120 | € 0,704 | € 3,52 |
| 125 - 245 | € 0,632 | € 3,16 |
| 250+ | € 0,626 | € 3,13 |
Технически документи
Спецификации
Brand
Texas InstrumentsProduct Type
MOSFET
Output Current
4A
Pin Count
5
Package Type
SOT-23
Fall Time
7ns
Number of Outputs
5
Driver Type
MOSFET
Rise Time
8ns
Minimum Supply Voltage
18V
Maximum Supply Voltage
18V
Number of Drivers
1
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
140°C
Width
1.75 mm
Series
UCC2751x
Height
1.45mm
Length
3.05mm
Standards/Approvals
No
Mount Type
Surface
Automotive Standard
No
Детайли за продукта
MOSFET & IGBT Drivers, 3A to 5A, Texas Instruments
A range of dedicated Gate Driver ICs from Texas Instruments suitable for both MOSFET and IGBT applications. The devices are capable of providing suitable high current outputs compatible with the drive requirements of MOSFET and IGBT power devices and are available in a variety of configurations and package types.

