Dual P-Channel MOSFET, 120 A, 30 V, 8-Pin LSON-CLIP Texas Instruments CSD87355Q5DT
Технически документи
Спецификации
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
30 V
Package Type
LSON-CLIP
Series
NexFET
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
12 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-8 V, +10 V
Maximum Operating Temperature
+125 °C
Length
6.1mm
Typical Gate Charge @ Vgs
18 nC, 40 nC
Width
5.1mm
Number of Elements per Chip
2
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Детайли за продукта
Power MOSFET Modules, Texas Instruments
Half-Bridge NexFET Power Block
MOSFET Transistors, Texas Instruments
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
5
P.O.A.
5
Ideate. Create. Collaborate
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Технически документи
Спецификации
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
30 V
Package Type
LSON-CLIP
Series
NexFET
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
12 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-8 V, +10 V
Maximum Operating Temperature
+125 °C
Length
6.1mm
Typical Gate Charge @ Vgs
18 nC, 40 nC
Width
5.1mm
Number of Elements per Chip
2
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Детайли за продукта
Power MOSFET Modules, Texas Instruments
Half-Bridge NexFET Power Block
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products