Texas Instruments NexFET N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK CSD19536KTTT

Технически документи
Спецификации
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
272 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
9.65mm
Length
10.67mm
Typical Gate Charge @ Vgs
118 nC @ 0 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
4.83mm
Страна на произход
Philippines
Детайли за продукта
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
€ 182,86
€ 3,657 Each (On a Reel of 50) (ex VAT)
50
€ 182,86
€ 3,657 Each (On a Reel of 50) (ex VAT)
50
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Ролка |
---|---|---|
50 - 50 | € 3,657 | € 182,86 |
100 - 200 | € 3,563 | € 178,17 |
250+ | € 3,474 | € 173,71 |
Технически документи
Спецификации
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
272 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
9.65mm
Length
10.67mm
Typical Gate Charge @ Vgs
118 nC @ 0 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
4.83mm
Страна на произход
Philippines
Детайли за продукта