N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19536KCS

Номер на артикул на RS: 827-4919Марка: Texas Instruments№ по каталога на производителя: CSD19536KCS
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

259 A

Maximum Drain Source Voltage

100 V

Series

NexFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Width

4.7mm

Transistor Material

Si

Typical Gate Charge @ Vgs

118 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

16.51mm

Детайли за продукта

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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€ 4,836

Each (In a Pack of 2) (ex VAT)

N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19536KCS
Изберете тип опаковка

€ 4,836

Each (In a Pack of 2) (ex VAT)

N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19536KCS
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
2 - 24€ 4,836€ 9,67
26+€ 3,918€ 7,84

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

259 A

Maximum Drain Source Voltage

100 V

Series

NexFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Width

4.7mm

Transistor Material

Si

Typical Gate Charge @ Vgs

118 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

16.51mm

Детайли за продукта

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more