N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19534KCS

Номер на артикул на RS: 145-1334Марка: Texas Instruments№ по каталога на производителя: CSD19534KCS
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Технически документи

Спецификации

Brand

Texas Instruments

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

NexFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

118 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

17.1 nC @ 0 V

Width

4.7mm

Number of Elements per Chip

1

Forward Diode Voltage

1.1V

Height

16.51mm

Minimum Operating Temperature

-55 °C

Страна на произход

Philippines

Детайли за продукта

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

€ 1,108

Each (In a Tube of 50) (ex VAT)

N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19534KCS

50

Предлагат се на бройка по 50
50€ 55,38
100€ 99,64
150€ 149,46
200€ 199,28
250€ 235,36
300€ 282,43
350€ 329,51
400€ 376,58
450€ 423,65
500€ 443,24
550€ 487,56
600€ 531,89
650€ 576,21
700€ 620,54
750€ 622,76

€ 1,108

Each (In a Tube of 50) (ex VAT)

N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19534KCS
Информацията за складовите наличности временно не е налична.

50

Предлагат се на бройка по 50
50€ 55,38
100€ 99,64
150€ 149,46
200€ 199,28
250€ 235,36
300€ 282,43
350€ 329,51
400€ 376,58
450€ 423,65
500€ 443,24
550€ 487,56
600€ 531,89
650€ 576,21
700€ 620,54
750€ 622,76

Купете в насипно състояние

количествоЕдинична ценаPer Тръба
50 - 50€ 1,108€ 55,38
100 - 200€ 0,996€ 49,82
250 - 450€ 0,941€ 47,07
500 - 700€ 0,886€ 44,32
750+€ 0,83€ 41,52

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Texas Instruments

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

NexFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

118 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

17.1 nC @ 0 V

Width

4.7mm

Number of Elements per Chip

1

Forward Diode Voltage

1.1V

Height

16.51mm

Minimum Operating Temperature

-55 °C

Страна на произход

Philippines

Детайли за продукта

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more